Infineon IPW65R045C7_200

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

CoolMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

650

Maximum Gate Source Voltage (V)

20

Maximum Gate Threshold Voltage (V)

4

Operating Junction Temperature (°C)

-55 to 150

Maximum Continuous Drain Current (A)

46

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

2

Maximum Drain Source Resistance (mOhm)

45@10V

Typical Gate Charge @ Vgs (nC)

93@10V

Typical Gate Charge @ 10V (nC)

93

Typical Input Capacitance @ Vds (pF)

4340@400V

Maximum Power Dissipation (mW)

227000

Typical Fall Time (ns)

7

Typical Rise Time (ns)

14

Typical Turn-Off Delay Time (ns)

82

Typical Turn-On Delay Time (ns)

20

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

21.1(Max)

Package Width

5.21(Max)

Package Length

16.13(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-247

Supplier Package

TO-247

Lead Shape

通孔

包装

Tube

零件状态

Unconfirmed

引脚数量

3

配置

Single

信道型

N