Infineon IRF1010ESTRRPBF

材料

Si

EU RoHS

符合免除

ECCN (US)

EAR99

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

60

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

84

Maximum Drain Source Resistance (MOhm)

12@10V

Typical Gate Charge @ Vgs (nC)

130(Max)@10V

Typical Gate Charge @ 10V (nC)

130(Max)

Typical Input Capacitance @ Vds (pF)

3210@25V

Maximum Power Dissipation (mW)

200000

Typical Fall Time (ns)

53

Typical Rise Time (ns)

78

Typical Turn-Off Delay Time (ns)

48

Typical Turn-On Delay Time (ns)

12

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

表面贴装

Package Height

4.83(Max)

Package Width

9.65(Max)

Package Length

10.67(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-263

Supplier Package

D2PAK

Lead Shape

Gull-wing

包装

卷带

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

N