Infineon IRF2907ZSTRL7PP

材料

Si

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

75

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

180

Maximum Drain Source Resistance (mOhm)

3.8@10V

Typical Gate Charge @ Vgs (nC)

170@10V

Typical Gate Charge @ 10V (nC)

170

Typical Input Capacitance @ Vds (pF)

7580@25V

Maximum Power Dissipation (mW)

300000

Typical Fall Time (ns)

44

Typical Rise Time (ns)

90

Typical Turn-Off Delay Time (ns)

92

Typical Turn-On Delay Time (ns)

21

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

表面贴装

Package Height

4.83(Max)

Package Width

9.65(Max)

Package Length

10.67(Max)

PCB changed

6

Tab

Tab

Standard Package Name

TO-263

Supplier Package

D2PAK

Lead Shape

Gull-wing

包装

卷带

零件状态

Obsolete

引脚数量

7

配置

单一泉源

信道型

N