Infineon IRF5Y5305CMSCS

材料

Si

EU RoHS

供应商未确认

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

55

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

18

Maximum Drain Source Resistance (MOhm)

65@10V

Typical Gate Charge @ Vgs (nC)

70(Max)@10V

Typical Gate Charge @ 10V (nC)

70(Max)

Typical Input Capacitance @ Vds (pF)

1290@25V

Maximum Power Dissipation (mW)

75000

Typical Fall Time (ns)

74(Max)

Typical Rise Time (ns)

125(Max)

Typical Turn-Off Delay Time (ns)

56(Max)

Typical Turn-On Delay Time (ns)

26(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

10.92(Max)

Package Width

5.08(Max)

Package Length

10.66(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-257AA

零件状态

活跃

引脚数量

3

配置

Single

信道型

P