Infineon IRF6726MPBF

材料

Si

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

DirectFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

32

Maximum Drain Source Resistance (MOhm)

1.7@10V

Typical Gate Charge @ Vgs (nC)

[email protected]

Typical Input Capacitance @ Vds (pF)

6140@15V

Maximum Power Dissipation (mW)

2800

Typical Fall Time (ns)

17

Typical Rise Time (ns)

30

Typical Turn-Off Delay Time (ns)

25

Typical Turn-On Delay Time (ns)

20

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

0.53(Max)

Package Width

5.05(Max)

Package Length

5.45(Max)

PCB changed

7

Supplier Package

Direct-FET MT

Lead Shape

No Lead

零件状态

Unconfirmed

引脚数量

7

配置

单四漏双源

信道型

N