Infineon IRF7103IPBF

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

2

Maximum Drain Source Voltage (V)

50

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

3

Maximum Drain Source Resistance (mOhm)

130@10V

Typical Gate Charge @ Vgs (nC)

12@10V

Typical Gate Charge @ 10V (nC)

12

Typical Input Capacitance @ Vds (pF)

290@25V

Maximum Power Dissipation (mW)

2000

Typical Fall Time (ns)

25

Typical Rise Time (ns)

8

Typical Turn-Off Delay Time (ns)

45

Typical Turn-On Delay Time (ns)

9

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1.5(Max)

Package Width

4(Max)

Package Length

5(Max)

PCB changed

8

Standard Package Name

SOP

Supplier Package

SOIC

Lead Shape

Gull-wing

包装

Tube

零件状态

Obsolete

引脚数量

8

配置

双排双泄

信道型

N