Infineon IRF7342HR

材料

Si

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

2

Maximum Drain Source Voltage (V)

55

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

1(Min)

Maximum Continuous Drain Current (A)

3.4

Maximum Drain Source Resistance (MOhm)

105@10V

Typical Gate Charge @ Vgs (nC)

26@10V

Typical Gate Charge @ 10V (nC)

26

Typical Input Capacitance @ Vds (pF)

690@25V

Maximum Power Dissipation (mW)

2000

Typical Fall Time (ns)

22

Typical Rise Time (ns)

10

Typical Turn-Off Delay Time (ns)

43

Typical Turn-On Delay Time (ns)

14

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

包装

卷带

零件状态

Obsolete

配置

双排双泄

信道型

P