Infineon IRF7343IPBF

表面安装

YES

终端数量

8

晶体管元件材料

SILICON

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

2

Maximum Drain Source Voltage (V)

55

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

3.4@P Channel|4.7@N Channel

Maximum Drain Source Resistance (mOhm)

105@10V@P Channel|50@10V@N Channel

Typical Gate Charge @ Vgs (nC)

26@10V@P Channel|24@10V@N Channel

Typical Gate Charge @ 10V (nC)

24@N Channel|26@P Channel

Typical Input Capacitance @ Vds (pF)

690@25V@P Channel|740@25V@N Channel

Maximum Power Dissipation (mW)

2000

Typical Fall Time (ns)

22@P Channel|13@N Channel

Typical Rise Time (ns)

10@P Channel|3.2@N Channel

Typical Turn-Off Delay Time (ns)

32@N Channel|43@P Channel

Typical Turn-On Delay Time (ns)

8.3@N Channel|14@P Channel

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1.5(Max)

Package Width

4(Max)

Package Length

5(Max)

PCB changed

8

Standard Package Name

SOP

Supplier Package

SOIC

Lead Shape

Gull-wing

Package Description

SMALL OUTLINE, R-PDSO-G8

Package Style

小概要

Moisture Sensitivity Levels

1

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

30

Operating Temperature-Max

150 °C

Rohs Code

有

Manufacturer Part Number

IRF7343IPBF

Package Shape

RECTANGULAR

Manufacturer

International Rectifier

Number of Elements

2

Part Life Cycle Code

Obsolete

Ihs Manufacturer

INTERNATIONAL RECTIFIER CORP

Risk Rank

5.16

Part Package Code

SOT

Drain Current-Max (ID)

4.7 A

包装

Tube

JESD-609代码

e3

无铅代码

有

零件状态

Obsolete

ECCN 代码

EAR99

端子表面处理

Matte Tin (Sn)

附加功能

雪崩 额定

子类别

其他晶体管

端子位置

DUAL

终端形式

鸥翼

峰值回流焊温度（摄氏度）

260

Reach合规守则

unknown

引脚数量

8

JESD-30代码

R-PDSO-G8

资历状况

不合格

配置

双排双泄

操作模式

增强型MOSFET

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL AND P-CHANNEL

JEDEC-95代码

MS-012AA

最大漏极电流 (Abs) (ID)

4.7 A

漏极-源极导通最大电阻

0.05 Ω

脉冲漏极电流-最大值(IDM)

38 A

DS 击穿电压-最小值

55 V

信道型

P|N

雪崩能量等级（Eas）

72 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

2 W