Infineon IRF7380TRPBF-1

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

2

Maximum Drain Source Voltage (V)

80

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

3.6

Maximum Gate Source Leakage Current (nA)

200

Maximum IDSS (uA)

20

Maximum Drain Source Resistance (MOhm)

73@10V

Typical Gate Charge @ Vgs (nC)

15@10V

Typical Gate Charge @ 10V (nC)

15

Typical Input Capacitance @ Vds (pF)

660@25V

Maximum Power Dissipation (mW)

2000

Typical Fall Time (ns)

17

Typical Rise Time (ns)

10

Typical Turn-Off Delay Time (ns)

41

Typical Turn-On Delay Time (ns)

9

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1.5(Max)

Package Width

4(Max)

Package Length

5(Max)

PCB changed

8

Standard Package Name

SOP

Supplier Package

SOIC

Lead Shape

Gull-wing

包装

卷带

零件状态

Obsolete

引脚数量

8

配置

双排双泄

信道型

N