Infineon IRF7523D1PBF

表面安装

YES

材料

Si

终端数量

8

晶体管元件材料

SILICON

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

2.7

Maximum Drain Source Resistance (mOhm)

130@10V

Typical Gate Charge @ Vgs (nC)

7.8@10V

Typical Gate Charge @ 10V (nC)

7.8

Typical Input Capacitance @ Vds (pF)

210@25V

Maximum Power Dissipation (mW)

1250

Typical Fall Time (ns)

5.3

Typical Rise Time (ns)

10

Typical Turn-Off Delay Time (ns)

12

Typical Turn-On Delay Time (ns)

4.7

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

0.86

Package Width

3

Package Length

3

PCB changed

8

Supplier Package

Micro

Package Description

LEAD FREE, MICRO-8

Package Style

小概要

Moisture Sensitivity Levels

1

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

30

Operating Temperature-Max

150 °C

Rohs Code

有

Manufacturer Part Number

IRF7523D1PBF

Package Shape

RECTANGULAR

Manufacturer

International Rectifier

Number of Elements

1

Part Life Cycle Code

Obsolete

Ihs Manufacturer

INTERNATIONAL RECTIFIER CORP

Risk Rank

5.81

Drain Current-Max (ID)

2.7 A

JESD-609代码

e3

零件状态

Obsolete

ECCN 代码

EAR99

端子表面处理

Matte Tin (Sn)

子类别

FET 通用电源

端子位置

DUAL

终端形式

鸥翼

峰值回流焊温度（摄氏度）

260

Reach合规守则

unknown

引脚数量

8

JESD-30代码

R-PDSO-G8

资历状况

不合格

配置

单排双泄

操作模式

增强型MOSFET

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

最大漏极电流 (Abs) (ID)

2.7 A

漏极-源极导通最大电阻

0.13 Ω

脉冲漏极电流-最大值(IDM)

21 A

DS 击穿电压-最小值

30 V

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

1.25 W