Infineon IRF7703PBF

材料

Si

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

40

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

6

Maximum Drain Source Resistance (mOhm)

28@10V

Typical Gate Charge @ Vgs (nC)

[email protected]

Typical Input Capacitance @ Vds (pF)

5220@25V

Maximum Power Dissipation (mW)

1500

Typical Fall Time (ns)

77

Typical Rise Time (ns)

405

Typical Turn-Off Delay Time (ns)

155

Typical Turn-On Delay Time (ns)

43

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1

Package Width

4.4

Package Length

3

PCB changed

8

Standard Package Name

SOP

Supplier Package

TSSOP

Lead Shape

Gull-wing

零件状态

Obsolete

引脚数量

8

配置

Single

信道型

P