Infineon IRF7751PBF

材料

Si

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

2

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

4.5

Maximum Drain Source Resistance (mOhm)

35@10V

Typical Gate Charge @ Vgs (nC)

29@10V

Typical Gate Charge @ 10V (nC)

29

Typical Input Capacitance @ Vds (pF)

1464@25V

Maximum Power Dissipation (mW)

1000

Typical Fall Time (ns)

80

Typical Rise Time (ns)

16

Typical Turn-Off Delay Time (ns)

155

Typical Turn-On Delay Time (ns)

13

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1

Package Width

4.4

Package Length

3

PCB changed

8

Standard Package Name

SOP

Supplier Package

TSSOP

Lead Shape

Gull-wing

零件状态

Obsolete

引脚数量

8

配置

双双源

信道型

P