Infineon IRF7807AHR

底架

表面贴装

引脚数

8

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

±12

Maximum Continuous Drain Current (A)

8.3

Maximum Drain Source Resistance (MOhm)

[email protected]

Typical Gate Charge @ Vgs (nC)

12@5V

Maximum Power Dissipation (mW)

2500

Typical Fall Time (ns)

6

Typical Rise Time (ns)

17

Typical Turn-Off Delay Time (ns)

25

Typical Turn-On Delay Time (ns)

12

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Number of Elements

1

RoHS

Compliant

包装

Tube

零件状态

Obsolete

最高工作温度

150 °C

最小工作温度

-55 °C

配置

单四漏三源

功率耗散

2.5 W

连续放电电流(ID)

8.3 A

栅极至源极电压(Vgs)

12 V

信道型

N

辐射硬化

无