Infineon IRFBF20S

EU RoHS

不合规

ECCN (US)

EAR99

HTS

8541.29.00.95

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

900

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

1.7

Maximum Drain Source Resistance (mOhm)

8000@10V

Typical Gate Charge @ Vgs (nC)

38(Max)@10V

Typical Gate Charge @ 10V (nC)

38(Max)

Typical Input Capacitance @ Vds (pF)

490@25V

Maximum Power Dissipation (mW)

3100

Typical Fall Time (ns)

32

Typical Rise Time (ns)

21

Typical Turn-Off Delay Time (ns)

56

Typical Turn-On Delay Time (ns)

8

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

包装

卷带

零件状态

Obsolete

配置

Single

信道型

N