Infineon IRFD210PBF

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.21.00.95

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

200

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

0.6

Maximum Drain Source Resistance (MOhm)

1500@10V

Typical Gate Charge @ Vgs (nC)

8.2(Max)@10V

Typical Gate Charge @ 10V (nC)

8.2(Max)

Typical Input Capacitance @ Vds (pF)

140@25V

Maximum Power Dissipation (mW)

1000

Typical Fall Time (ns)

8.9

Typical Rise Time (ns)

17

Typical Turn-Off Delay Time (ns)

14

Typical Turn-On Delay Time (ns)

8.2

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

零件状态

活跃

配置

单排双泄

信道型

N