Infineon IRFH7923PBF

表面安装

YES

终端数量

5

晶体管元件材料

SILICON

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

15

Maximum Drain Source Resistance (mOhm)

8.7@10V

Typical Gate Charge @ Vgs (nC)

[email protected]

Typical Input Capacitance @ Vds (pF)

1095@15V

Maximum Power Dissipation (mW)

3100

Typical Fall Time (ns)

4.9

Typical Rise Time (ns)

8.7

Typical Turn-Off Delay Time (ns)

8.6

Typical Turn-On Delay Time (ns)

7.1

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

0.95(Max)

Package Width

6

Package Length

5

PCB changed

8

Standard Package Name

QFN

Supplier Package

PQFN

Lead Shape

No Lead

Package Description

ROHS COMPLIANT, PLASTIC, QFN-8

Package Style

小概要

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

30

Operating Temperature-Max

150 °C

Rohs Code

有

Manufacturer Part Number

IRFH7923PBF

Package Shape

RECTANGULAR

Manufacturer

International Rectifier

Number of Elements

1

Part Life Cycle Code

Obsolete

Ihs Manufacturer

INTERNATIONAL RECTIFIER CORP

Risk Rank

5.83

Part Package Code

QFN

Drain Current-Max (ID)

15 A

JESD-609代码

e3

零件状态

Obsolete

ECCN 代码

EAR99

端子表面处理

Matte Tin (Sn)

HTS代码

8541.29.00.95

子类别

FET 通用电源

端子位置

DUAL

终端形式

无铅

峰值回流焊温度（摄氏度）

260

Reach合规守则

unknown

引脚数量

8

JESD-30代码

R-PDSO-N5

资历状况

不合格

配置

单四漏三源

操作模式

增强型MOSFET

箱体转运

DRAIN

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

最大漏极电流 (Abs) (ID)

15 A

漏极-源极导通最大电阻

0.0087 Ω

脉冲漏极电流-最大值(IDM)

120 A

DS 击穿电压-最小值

30 V

信道型

N

雪崩能量等级（Eas）

26 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

3 W