Infineon IRFH8311TR2PBF

表面安装

YES

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

2.35

Maximum Continuous Drain Current (A)

32

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (mOhm)

2.1@10V

Typical Gate Charge @ Vgs (nC)

[email protected]|66@10V

Typical Gate Charge @ 10V (nC)

66

Typical Input Capacitance @ Vds (pF)

4960@10V

Maximum Power Dissipation (mW)

3600

Typical Fall Time (ns)

12

Typical Rise Time (ns)

26

Typical Turn-Off Delay Time (ns)

21

Typical Turn-On Delay Time (ns)

21

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1.03

Package Width

5.75

Package Length

4.9

PCB changed

8

Standard Package Name

QFN

Supplier Package

QFN EP

Lead Shape

No Lead

Operating Temperature-Max

150 °C

Rohs Code

有

Manufacturer Part Number

IRFH8311TR2PBF

Manufacturer

International Rectifier

Part Life Cycle Code

Obsolete

Ihs Manufacturer

INTERNATIONAL RECTIFIER CORP

Risk Rank

5.35

包装

卷带

零件状态

Obsolete

子类别

FET 通用电源

Reach合规守则

unknown

引脚数量

8

配置

单四漏三源

极性/通道类型

N-CHANNEL

最大漏极电流 (Abs) (ID)

169 A

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

96 W