Infineon IRFR120NHR

底架

表面贴装

引脚数

3

材料

Si

EU RoHS

不合规

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

9.4

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

25

Maximum Drain Source Resistance (MOhm)

210@10V

Typical Gate Charge @ Vgs (nC)

25(Max)@10V

Typical Gate Charge @ 10V (nC)

25(Max)

Typical Input Capacitance @ Vds (pF)

330@25V

Maximum Power Dissipation (mW)

48000

Typical Fall Time (ns)

23

Typical Rise Time (ns)

23

Typical Turn-Off Delay Time (ns)

32

Typical Turn-On Delay Time (ns)

4.5

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Number of Elements

1

RoHS

Compliant

零件状态

Obsolete

最高工作温度

175 °C

最小工作温度

-55 °C

配置

Single

功率耗散

48 W

连续放电电流(ID)

9.4 A

栅极至源极电压(Vgs)

20 V

信道型

N