Infineon IRFR220NHR

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

200

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

5

Maximum Drain Source Resistance (MOhm)

600@10V

Typical Gate Charge @ Vgs (nC)

15@10V

Typical Gate Charge @ 10V (nC)

15

Typical Input Capacitance @ Vds (pF)

300@25V

Maximum Power Dissipation (mW)

43000

Typical Fall Time (ns)

12

Typical Rise Time (ns)

11

Typical Turn-Off Delay Time (ns)

20

Typical Turn-On Delay Time (ns)

6.4

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

包装

卷带

零件状态

Obsolete

配置

Single

信道型

N