Infineon IRFR3911TRRPBF

EU RoHS

符合免除

ECCN (US)

EAR99

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

14

Maximum Drain Source Resistance (mOhm)

115@10V

Typical Gate Charge @ Vgs (nC)

21@10V

Typical Gate Charge @ 10V (nC)

21

Typical Input Capacitance @ Vds (pF)

740@25V

Maximum Power Dissipation (mW)

56000

Typical Fall Time (ns)

25

Typical Rise Time (ns)

26

Typical Turn-Off Delay Time (ns)

52

Typical Turn-On Delay Time (ns)

7.9

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

表面贴装

Package Height

2.39(Max)

Package Width

6.22(Max)

Package Length

6.73(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-252

Supplier Package

DPAK

Lead Shape

Gull-wing

包装

卷带

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

N