Infineon IRFR9024NCPBF

表面安装

YES

终端数量

2

晶体管元件材料

SILICON

EU RoHS

符合免除

ECCN (US)

EAR99

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

55

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

11

Maximum Drain Source Resistance (mOhm)

175@10V

Typical Gate Charge @ Vgs (nC)

19(Max)@10V

Typical Gate Charge @ 10V (nC)

19(Max)

Typical Input Capacitance @ Vds (pF)

350@25V

Maximum Power Dissipation (mW)

38000

Typical Fall Time (ns)

37

Typical Rise Time (ns)

55

Typical Turn-Off Delay Time (ns)

23

Typical Turn-On Delay Time (ns)

13

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

2.39(Max)

Package Width

6.22(Max)

Package Length

6.73(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-252

Supplier Package

DPAK

Package Description

LEAD FREE, PLASTIC, DPAK-3

Package Style

小概要

Moisture Sensitivity Levels

1

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

30

Operating Temperature-Max

150 °C

Rohs Code

有

Manufacturer Part Number

IRFR9024NCPBF

Package Shape

RECTANGULAR

Manufacturer

International Rectifier

Number of Elements

1

Part Life Cycle Code

Obsolete

Ihs Manufacturer

INTERNATIONAL RECTIFIER CORP

Risk Rank

5.05

Part Package Code

TO-252AA

Drain Current-Max (ID)

11 A

JESD-609代码

e3

零件状态

Obsolete

ECCN 代码

EAR99

端子表面处理

Matte Tin (Sn) - with Nickel (Ni) barrier

附加功能

雪崩 额定

子类别

其他晶体管

端子位置

SINGLE

终端形式

鸥翼

峰值回流焊温度（摄氏度）

260

Reach合规守则

not_compliant

引脚数量

3

JESD-30代码

R-PSSO-G2

资历状况

不合格

配置

Single

操作模式

增强型MOSFET

箱体转运

DRAIN

晶体管应用

SWITCHING

极性/通道类型

P-CHANNEL

JEDEC-95代码

TO-252AA

最大漏极电流 (Abs) (ID)

11 A

漏极-源极导通最大电阻

0.175 Ω

脉冲漏极电流-最大值(IDM)

44 A

DS 击穿电压-最小值

55 V

信道型

P

雪崩能量等级（Eas）

62 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

38 W