Infineon IRHG57110

材料

Si

EU RoHS

不合规

ECCN (US)

出口接触方式

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

R5

Channel Mode

Enhancement

Number of Elements per Chip

4

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

1.6

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

10

Maximum Drain Source Resistance (MOhm)

290@12V

Typical Gate Charge @ Vgs (nC)

17(Max)@12V

Typical Input Capacitance @ Vds (pF)

370@25V

Maximum Power Dissipation (mW)

1400

Typical Fall Time (ns)

15(Max)

Typical Rise Time (ns)

16(Max)

Typical Turn-Off Delay Time (ns)

30(Max)

Typical Turn-On Delay Time (ns)

21(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

3.3(Max)

Package Width

7.74(Max)

Package Length

19.3(Max)

PCB changed

14

Standard Package Name

MO-036AB

Supplier Package

MO-036AB

零件状态

活跃

引脚数量

14

配置

Quad

信道型

N