Infineon IRHG597110

表面安装

NO

终端数量

14

晶体管元件材料

SILICON

EU RoHS

不合规

ECCN (US)

出口接触方式

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

4

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

0.96

Maximum Drain Source Resistance (MOhm)

960@12V

Typical Gate Charge @ Vgs (nC)

13.4(Max)@12V

Typical Input Capacitance @ Vds (pF)

390@25V

Maximum Power Dissipation (mW)

1400

Typical Fall Time (ns)

90(Max)

Typical Rise Time (ns)

17(Max)

Typical Turn-Off Delay Time (ns)

40(Max)

Typical Turn-On Delay Time (ns)

21(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

3.3(Max)

Package Width

7.74(Max)

Package Length

19.3(Max)

PCB changed

14

Standard Package Name

MO-036AB

Supplier Package

MO-036AB

Package Description

HERMETIC SEALED, CERAMIC PACKAGE-14

Package Style

IN-LINE

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

150 °C

Rohs Code

无

Manufacturer Part Number

IRHG597110

Package Shape

RECTANGULAR

Manufacturer

Infineon Technologies AG

Number of Elements

4

Part Life Cycle Code

活跃

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

5.21

Drain Current-Max (ID)

0.96 A

JESD-609代码

e0

零件状态

活跃

ECCN 代码

EAR99

端子表面处理

Tin/Lead (Sn/Pb)

子类别

其他晶体管

端子位置

DUAL

终端形式

THROUGH-HOLE

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

unknown

引脚数量

14

JESD-30代码

R-CDIP-T14

资历状况

不合格

配置

Quad

操作模式

增强型MOSFET

晶体管应用

SWITCHING

极性/通道类型

P-CHANNEL

JEDEC-95代码

MO-036AB

最大漏极电流 (Abs) (ID)

0.96 A

漏极-源极导通最大电阻

0.96 Ω

DS 击穿电压-最小值

100 V

信道型

P

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

1.4 W