Infineon IRHG6110SCS

EU RoHS

不合规

ECCN (US)

出口接触方式

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

4

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

1@N Channel|0.75@P Channel

Maximum Drain Source Resistance (mOhm)

700@12V@N Channel|1200@12V@P Channel

Typical Gate Charge @ Vgs (nC)

11(Max)@12V@N Channel|15(Max)@12V@P Channel

Typical Input Capacitance @ Vds (pF)

300@25V@N Channel|335@25V@P Channel

Maximum Power Dissipation (mW)

1400

Supplier Package

MO-036AB

Standard Package Name

MO-036AB

PCB changed

14

Package Length

19.3(Max)

Package Width

7.74(Max)

Package Height

3.3(Max)

Mounting

通孔

Maximum Operating Temperature (°C)

150

Minimum Operating Temperature (°C)

-55

Typical Turn-On Delay Time (ns)

20(Max)@N Channel|22(Max)@P Channel

Typical Turn-Off Delay Time (ns)

65(Max)@N Channel|66(Max)@P Channel

Typical Rise Time (ns)

16(Max)@N Channel|19(Max)@P Channel

Typical Fall Time (ns)

45(Max)@N Channel|51(Max)@P Channel

零件状态

活跃

引脚数量

14

配置

Quad

信道型

N|P