Infineon IRHLF770Z4

表面安装

NO

终端数量

3

晶体管元件材料

SILICON

EU RoHS

不合规

ECCN (US)

出口接触方式

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

60

Maximum Gate Source Voltage (V)

±10

Maximum Continuous Drain Current (A)

1.6

Maximum Drain Source Resistance (MOhm)

[email protected]

Typical Gate Charge @ Vgs (nC)

2.6(Max)@4.5V

Typical Input Capacitance @ Vds (pF)

152@25V

Maximum Power Dissipation (mW)

5000

Typical Fall Time (ns)

13(Max)

Typical Rise Time (ns)

14(Max)

Typical Turn-Off Delay Time (ns)

30(Max)

Typical Turn-On Delay Time (ns)

6.5(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

4.54(Max)

PCB changed

3

Standard Package Name

TO-205-AF

Supplier Package

TO-39

Lead Shape

通孔

Package Description

CYLINDRICAL, O-MBCY-W3

Package Style

CYLINDRICAL

Package Body Material

METAL

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

150 °C

Manufacturer Part Number

IRHLF770Z4

Package Shape

ROUND

Manufacturer

International Rectifier

Number of Elements

1

Part Life Cycle Code

Transferred

Ihs Manufacturer

INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC

Risk Rank

7.6

Part Package Code

BCY

Drain Current-Max (ID)

1.6 A

无铅代码

无

零件状态

活跃

ECCN 代码

EAR99

附加功能

cmos 兼容

端子位置

BOTTOM

终端形式

WIRE

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

unknown

引脚数量

3

JESD-30代码

O-MBCY-W3

资历状况

不合格

配置

Single

操作模式

增强型MOSFET

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

JEDEC-95代码

TO-205AF

漏极-源极导通最大电阻

0.5 Ω

DS 击穿电压-最小值

60 V

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR

直径

9.22(Max)