Infineon IRHLF7970Z4SCS

EU RoHS

供应商未确认

ECCN (US)

出口接触方式

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

R7

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

60

Maximum Gate Source Voltage (V)

±10

Maximum Gate Threshold Voltage (V)

2

Maximum Continuous Drain Current (A)

1.5

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

[email protected]

Typical Gate Charge @ Vgs (nC)

2.8(Max)@4.5V

Typical Input Capacitance @ Vds (pF)

177@25V

Maximum Power Dissipation (mW)

5000

Typical Fall Time (ns)

27(Max)

Typical Rise Time (ns)

45(Max)

Typical Turn-Off Delay Time (ns)

12(Max)

Typical Turn-On Delay Time (ns)

24(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

4.54(Max)

PCB changed

3

Standard Package Name

TO-205-AF

Supplier Package

TO-39

Lead Shape

通孔

零件状态

活跃

引脚数量

3

配置

Single

信道型

P

直径

9.22(Max)