Infineon IRHLNMC73110

材料

Si

ECCN (US)

EAR99

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±10

Operating Junction Temperature (°C)

-55 to 150

Maximum Continuous Drain Current (A)

6.5

Maximum Drain Source Resistance (MOhm)

[email protected]

Typical Gate Charge @ Vgs (nC)

11(Max)@4.5V

Typical Input Capacitance @ Vds (pF)

572@25V

Maximum Power Dissipation (mW)

23200

Typical Fall Time (ns)

12(Max)

Typical Rise Time (ns)

75(Max)

Typical Turn-Off Delay Time (ns)

50(Max)

Typical Turn-On Delay Time (ns)

18(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

配置

Single

信道型

N