Infineon IRHM7250SESCS

EU RoHS

不合规

ECCN (US)

出口接触方式

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

200

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4.5

Maximum Continuous Drain Current (A)

26

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

25

Maximum Drain Source Resistance (MOhm)

105@12V

Typical Gate Charge @ Vgs (nC)

180(Max)@12V

Typical Input Capacitance @ Vds (pF)

3100@25V

Maximum Power Dissipation (mW)

150000

Typical Fall Time (ns)

140(Max)

Typical Rise Time (ns)

140(Max)

Typical Turn-Off Delay Time (ns)

140(Max)

Typical Turn-On Delay Time (ns)

33(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

零件状态

Unconfirmed

配置

Single

信道型

N