Infineon IRHM9150

表面安装

NO

终端数量

3

晶体管元件材料

SILICON

EU RoHS

不合规

ECCN (US)

出口接触方式

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

22

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

25

Maximum Drain Source Resistance (MOhm)

85@12V

Typical Gate Charge @ Vgs (nC)

200(Max)@12V

Typical Input Capacitance @ Vds (pF)

4300@25V

Maximum Power Dissipation (mW)

150000

Typical Fall Time (ns)

190(Max)

Typical Rise Time (ns)

170(Max)

Typical Turn-Off Delay Time (ns)

190(Max)

Typical Turn-On Delay Time (ns)

40(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

13.84(Max)

Package Width

6.6(Max)

Package Length

13.84(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-254-AA

Supplier Package

TO-254AA

Lead Shape

通孔

Package Description

HERMETIC SEALED, CERAMIC PACKAGE-3

Package Style

FLANGE MOUNT

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

150 °C

Rohs Code

无

Manufacturer Part Number

IRHM9150

Package Shape

SQUARE

Manufacturer

Infineon Technologies AG

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

5.22

Drain Current-Max (ID)

22 A

JESD-609代码

e0

零件状态

活跃

ECCN 代码

EAR99

端子表面处理

Tin/Lead (Sn/Pb)

附加功能

HIGH RELIABILITY

子类别

其他晶体管

端子位置

SINGLE

终端形式

PIN/PEG

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

unknown

引脚数量

3

JESD-30代码

S-CSFM-P3

资历状况

不合格

配置

Single

操作模式

增强型MOSFET

箱体转运

ISOLATED

晶体管应用

SWITCHING

极性/通道类型

P-CHANNEL

JEDEC-95代码

TO-254AA

最大漏极电流 (Abs) (ID)

22 A

漏极-源极导通最大电阻

0.085 Ω

脉冲漏极电流-最大值(IDM)

88 A

DS 击穿电压-最小值

100 V

信道型

P

雪崩能量等级（Eas）

500 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

150 W