Infineon IRHN57250SE

EU RoHS

不合规

Typical Rise Time (ns)

125(Max)

Typical Fall Time (ns)

80(Max)

Maximum Power Dissipation (mW)

150000

Typical Input Capacitance @ Vds (pF)

3860@25V

Typical Gate Charge @ Vgs (nC)

132(Max)@12V

Maximum Drain Source Resistance (MOhm)

60@12V

Maximum Continuous Drain Current (A)

31

Maximum Gate Source Voltage (V)

±20

Maximum Drain Source Voltage (V)

200

Number of Elements per Chip

1

Channel Mode

Enhancement

Category

功率MOSFET

PPAP

无

Automotive

无

HTS

8541.29.00.95

ECCN (US)

出口接触方式

Typical Turn-Off Delay Time (ns)

80(Max)

Typical Turn-On Delay Time (ns)

35(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

3.07(Max)

Package Width

11.55(Max)

Package Length

16(Max)

PCB changed

3

Standard Package Name

SMD

Supplier Package

SMD-1

零件状态

活跃

引脚数量

3

配置

Single

信道型

N