Infineon IRHNA57160

Package Height

3.07(Max)

Mounting

表面贴装

Maximum Operating Temperature (°C)

150

Minimum Operating Temperature (°C)

-55

Typical Turn-On Delay Time (ns)

35(Max)

Typical Turn-Off Delay Time (ns)

75(Max)

Typical Rise Time (ns)

125(Max)

Typical Fall Time (ns)

50(Max)

Maximum Power Dissipation (mW)

250000

Typical Input Capacitance @ Vds (pF)

6440@25V

Typical Gate Charge @ Vgs (nC)

160(Max)@12V

Maximum Drain Source Resistance (MOhm)

12@12V

Maximum Continuous Drain Current (A)

75

Maximum Gate Source Voltage (V)

±20

Maximum Drain Source Voltage (V)

100

Number of Elements per Chip

1

Channel Mode

Enhancement

Category

功率MOSFET

PPAP

无

Automotive

无

HTS

8541.29.00.95

ECCN (US)

出口接触方式

EU RoHS

不合规

Package Width

17.65(Max)

Package Length

13.46(Max)

PCB changed

3

Standard Package Name

SMD

Supplier Package

SMD-2

零件状态

活跃

引脚数量

3

配置

Single

信道型

N