Infineon IRHNA9064

EU RoHS

不合规

ECCN (US)

出口接触方式

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

60

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

48

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

25

Maximum Drain Source Resistance (mOhm)

48@12V

Typical Gate Charge @ Vgs (nC)

300(Max)@12V

Typical Input Capacitance @ Vds (pF)

6700@25V

Maximum Power Dissipation (mW)

300000

Typical Fall Time (ns)

200(Max)

Typical Rise Time (ns)

150(Max)

Typical Turn-Off Delay Time (ns)

200(Max)

Typical Turn-On Delay Time (ns)

35(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

3.07(Max)

Package Width

17.65(Max)

Package Length

13.46(Max)

PCB changed

3

Standard Package Name

SMD

Supplier Package

SMD-2

零件状态

活跃

引脚数量

3

配置

Single

信道型

P