Infineon IRHNJ57230SE

表面安装

YES

终端数量

3

晶体管元件材料

SILICON

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

200

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

12

Maximum Drain Source Resistance (MOhm)

220@12V

Typical Gate Charge @ Vgs (nC)

28(Max)@12V

Typical Input Capacitance @ Vds (pF)

1000@25V

Maximum Power Dissipation (mW)

75000

Typical Fall Time (ns)

30(Max)

Typical Rise Time (ns)

100(Max)

Typical Turn-Off Delay Time (ns)

35(Max)

Typical Turn-On Delay Time (ns)

25(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

2.61(Max)

Package Width

10.28(Max)

Package Length

7.64(Max)

PCB changed

3

Standard Package Name

SMD

Supplier Package

SMD-0.5

Lead Shape

No Lead

Category

功率MOSFET

PPAP

无

Automotive

无

ECCN (US)

EAR99

EU RoHS

不合规

Package Description

SMD0.5, 3 PIN

Package Style

CHIP CARRIER

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

150 °C

Rohs Code

无

Manufacturer Part Number

IRHNJ57230SE

Package Shape

RECTANGULAR

Manufacturer

Infineon Technologies AG

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

5.18

Drain Current-Max (ID)

12 A

JESD-609代码

e0

零件状态

活跃

ECCN 代码

EAR99

端子表面处理

Tin/Lead (Sn/Pb)

子类别

FET 通用电源

端子位置

BOTTOM

终端形式

无铅

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

unknown

引脚数量

3

JESD-30代码

R-CBCC-N3

资历状况

不合格

配置

Single

操作模式

增强型MOSFET

箱体转运

DRAIN

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

最大漏极电流 (Abs) (ID)

12 A

漏极-源极导通最大电阻

0.22 Ω

脉冲漏极电流-最大值(IDM)

48 A

DS 击穿电压-最小值

200 V

信道型

N

雪崩能量等级（Eas）

60 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

75 W