Infineon IRHNJ67230SCS

表面安装

YES

终端数量

3

晶体管元件材料

SILICON

Maximum Gate Source Voltage (V)

±20

Maximum Drain Source Voltage (V)

200

Number of Elements per Chip

1

Channel Mode

Enhancement

Category

功率MOSFET

PPAP

无

Automotive

无

HTS

8541.29.00.95

ECCN (US)

出口接触方式

EU RoHS

不合规

Maximum Continuous Drain Current (A)

16

Maximum Drain Source Resistance (MOhm)

130@12V

Typical Gate Charge @ Vgs (nC)

42(Max)@12V

Typical Input Capacitance @ Vds (pF)

1450@25V

Maximum Power Dissipation (mW)

75000

Typical Fall Time (ns)

10(Max)

Typical Rise Time (ns)

32(Max)

Typical Turn-Off Delay Time (ns)

41(Max)

Typical Turn-On Delay Time (ns)

18(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

2.61(Max)

Package Width

10.28(Max)

Package Length

7.64(Max)

PCB changed

3

Standard Package Name

SMD

Supplier Package

SMD-0.5

Lead Shape

No Lead

Drain Current-Max (ID)

19 A

Risk Rank

5.66

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Part Life Cycle Code

活跃

Number of Elements

1

Manufacturer

Infineon Technologies AG

Package Shape

RECTANGULAR

Manufacturer Part Number

IRHNJ67230SCS

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Package Style

CHIP CARRIER

Package Description

CHIP CARRIER, R-CBCC-N3

零件状态

活跃

ECCN 代码

EAR99

端子位置

BOTTOM

终端形式

无铅

Reach合规守则

compliant

引脚数量

3

JESD-30代码

R-CBCC-N3

配置

Single

操作模式

增强型MOSFET

箱体转运

DRAIN

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

漏极-源极导通最大电阻

0.13 Ω

脉冲漏极电流-最大值(IDM)

76 A

DS 击穿电压-最小值

200 V

信道型

N

雪崩能量等级（Eas）

60 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR