Infineon IRHNM593110

材料

Si

EU RoHS

不合规

ECCN (US)

出口接触方式

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

R5

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

3.1

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

10

Maximum Drain Source Resistance (mOhm)

1200@12V

Typical Gate Charge @ Vgs (nC)

11(Max)@12V

Typical Input Capacitance @ Vds (pF)

379@25V

Maximum Power Dissipation (mW)

23000

Typical Fall Time (ns)

85(Max)

Typical Rise Time (ns)

26(Max)

Typical Turn-Off Delay Time (ns)

24(Max)

Typical Turn-On Delay Time (ns)

18(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

2.69(Max)

Package Width

8.15(Max)

Package Length

5.74(Max)

PCB changed

3

Supplier Package

SMD-0.2

零件状态

活跃

引脚数量

3

配置

Single

信道型

P