Infineon IRHNMC57110

EU RoHS

不合规

ECCN (US)

出口接触方式

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

6.9

Maximum Drain Source Resistance (MOhm)

220@12V

Typical Gate Charge @ Vgs (nC)

15(Max)@12V

Typical Input Capacitance @ Vds (pF)

378@25V

Maximum Power Dissipation (mW)

23000

Typical Fall Time (ns)

15(Max)

Typical Rise Time (ns)

8(Max)

Typical Turn-Off Delay Time (ns)

34(Max)

Typical Turn-On Delay Time (ns)

6.6(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

2.69(Max)

Package Width

8.15(Max)

Package Length

5.74(Max)

PCB changed

3

Supplier Package

CSMD-0.2

Lead Shape

No Lead

零件状态

活跃

引脚数量

3

配置

Single

信道型

N