Infineon IRHNS57160

材料

Si

EU RoHS

供应商未确认

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Operating Junction Temperature (°C)

-55 to 150

Maximum Continuous Drain Current (A)

75

Maximum Drain Source Resistance (MOhm)

12@12V

Typical Gate Charge @ Vgs (nC)

160(Max)@12V

Typical Input Capacitance @ Vds (pF)

6440@25V

Maximum Power Dissipation (mW)

250000

Typical Fall Time (ns)

50(Max)

Typical Rise Time (ns)

125(Max)

Typical Turn-Off Delay Time (ns)

75(Max)

Typical Turn-On Delay Time (ns)

35(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

零件状态

活跃

配置

Single

信道型

N