Infineon IRHQ6110

EU RoHS

不合规

ECCN (US)

出口接触方式

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

4

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

3@N Channel|2.3@ P Channel

Maximum Drain Source Resistance (MOhm)

600@12V@N Channel|1100@12V@P Channel

Typical Gate Charge @ Vgs (nC)

17(Max)@12V@N Channel|16(Max)@12V@P Channel

Typical Input Capacitance @ Vds (pF)

270@25V@N Channel|285@25V@P Channel

Maximum Power Dissipation (mW)

12000

Typical Fall Time (ns)

40(Max)@N Channel|32(Max)@P Channel

Typical Rise Time (ns)

25(Max)@N Channel|17(Max)@P Channel

Typical Turn-Off Delay Time (ns)

40(Max)@N Channel|32(Max)@P Channel

Typical Turn-On Delay Time (ns)

20(Max)@N Channel|21(Max)@P Channel

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

2.41(Max)

Package Width

11.68(Max)

Package Length

11.68(Max)

PCB changed

28

Standard Package Name

LCC

Supplier Package

CLCC

Lead Shape

No Lead

零件状态

活跃

引脚数量

28

配置

四重双漏极双源极

信道型

N|P