Infineon IRHSNA57Z60SCVD

材料

Si

EU RoHS

供应商未确认

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

±20

Operating Junction Temperature (°C)

-55 to 150

Maximum Continuous Drain Current (A)

75

Maximum Drain Source Resistance (mOhm)

3.5@12V

Typical Gate Charge @ Vgs (nC)

200(Max)@12V

Maximum Power Dissipation (mW)

250000

Typical Fall Time (ns)

26(Max)

Typical Rise Time (ns)

160(Max)

Typical Turn-Off Delay Time (ns)

78(Max)

Typical Turn-On Delay Time (ns)

35(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

3.07(Max)

Package Width

17.65(Max)

Package Length

13.46(Max)

PCB changed

3

Supplier Package

SMD-2

零件状态

Preliminary

引脚数量

3

配置

Single

信道型

N