Infineon IRHYS597034CM

EU RoHS

不合规

ECCN (US)

出口接触方式

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

R5

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

60

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

20

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

10

Maximum Drain Source Resistance (MOhm)

87@12V

Typical Gate Charge @ Vgs (nC)

45(Max)@12V

Typical Input Capacitance @ Vds (pF)

1560@25V

Maximum Power Dissipation (mW)

75000

Typical Fall Time (ns)

50(Max)

Typical Rise Time (ns)

65(Max)

Typical Turn-Off Delay Time (ns)

75(Max)

Typical Turn-On Delay Time (ns)

25(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

10.92(Max)

Package Width

5.08(Max)

Package Length

10.66(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-257AA

Lead Shape

通孔

零件状态

活跃

引脚数量

3

配置

Single

信道型

P