Infineon IRHYS67230CMSCV

EU RoHS

供应商未确认

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

200

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

16

Maximum Drain Source Resistance (MOhm)

130@12V

Typical Gate Charge @ Vgs (nC)

42(Max)@12V

Typical Input Capacitance @ Vds (pF)

1660@25V

Maximum Power Dissipation (mW)

75000

Typical Fall Time (ns)

15(Max)

Typical Rise Time (ns)

40(Max)

Typical Turn-Off Delay Time (ns)

35(Max)

Typical Turn-On Delay Time (ns)

15(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

10.67(Max)

Package Width

5.08(Max)

Package Length

10.66(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-257

Supplier Package

TO-257

零件状态

活跃

引脚数量

3

配置

Single

信道型

N