Infineon IRL2203NHR

材料

Si

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

±16

Maximum Continuous Drain Current (A)

116

Maximum Drain Source Resistance (MOhm)

7@10V

Typical Gate Charge @ Vgs (nC)

60(Max)@4.5V

Typical Input Capacitance @ Vds (pF)

3290@25V

Maximum Power Dissipation (mW)

180000

Typical Fall Time (ns)

66

Typical Rise Time (ns)

160

Typical Turn-Off Delay Time (ns)

23

Typical Turn-On Delay Time (ns)

11

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

包装

Tube

零件状态

Obsolete

配置

Single

信道型

N