Infineon IRL5NJ024SCS

材料

Si

EU RoHS

供应商未确认

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

55

Maximum Gate Source Voltage (V)

±16

Maximum Continuous Drain Current (A)

17

Maximum Drain Source Resistance (MOhm)

60@10V

Typical Gate Charge @ Vgs (nC)

15(Max)@5V

Typical Input Capacitance @ Vds (pF)

514@25V

Maximum Power Dissipation (mW)

35000

Typical Fall Time (ns)

66(Max)

Typical Rise Time (ns)

133(Max)

Typical Turn-Off Delay Time (ns)

35(Max)

Typical Turn-On Delay Time (ns)

11(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

2.61(Max)

Package Width

10.28(Max)

Package Length

7.64(Max)

PCB changed

3

Standard Package Name

SMD

Supplier Package

SMD-0.5

Lead Shape

No Lead

零件状态

活跃

引脚数量

3

配置

Single

信道型

N