Infineon IRLML2402TRHR

材料

Si

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

20

Maximum Gate Source Voltage (V)

±12

Maximum Gate Threshold Voltage (V)

0.7(Min)

Maximum Continuous Drain Current (A)

1.2

Maximum Drain Source Resistance (mOhm)

[email protected]

Typical Gate Charge @ Vgs (nC)

[email protected]

Typical Gate to Drain Charge (nC)

1.1

Typical Gate to Source Charge (nC)

0.41

Typical Reverse Recovery Charge (nC)

16

Typical Input Capacitance @ Vds (pF)

110@15V

Typical Output Capacitance (pF)

51

Maximum Power Dissipation (mW)

540

Typical Fall Time (ns)

4.8

Typical Rise Time (ns)

9.5

Typical Turn-Off Delay Time (ns)

9.7

Typical Turn-On Delay Time (ns)

2.5

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

包装

卷带

零件状态

Obsolete

配置

Single

信道型

N