Infineon IRLML6402PBF

材料

Si

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

20

Maximum Gate Source Voltage (V)

±12

Maximum Gate Threshold Voltage (V)

1.2

Maximum Continuous Drain Current (A)

3.7

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

[email protected]

Typical Gate Charge @ Vgs (nC)

8@5V

Typical Gate to Drain Charge (nC)

2.8

Typical Gate to Source Charge (nC)

1.2

Typical Reverse Recovery Charge (nC)

11

Typical Input Capacitance @ Vds (pF)

633@10V

Typical Output Capacitance (pF)

145

Maximum Power Dissipation (mW)

1300

Typical Fall Time (ns)

381

Typical Rise Time (ns)

48

Typical Turn-Off Delay Time (ns)

588

Typical Turn-On Delay Time (ns)

350

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1.02(Max)

Package Width

1.4(Max)

Package Length

3.04(Max)

PCB changed

3

Standard Package Name

SOT

Supplier Package

SOT-23

Lead Shape

Gull-wing

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

P