Infineon IRLR7821CPBF

表面安装

YES

终端数量

2

晶体管元件材料

SILICON

EU RoHS

符合免除

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

65

Maximum Drain Source Resistance (mOhm)

10@10V

Typical Gate Charge @ Vgs (nC)

[email protected]

Typical Input Capacitance @ Vds (pF)

1030@15V

Maximum Power Dissipation (mW)

75000

Typical Fall Time (ns)

3.2

Typical Rise Time (ns)

4.2

Typical Turn-Off Delay Time (ns)

10

Typical Turn-On Delay Time (ns)

11

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

表面贴装

Package Height

2.39(Max)

Package Width

6.22(Max)

Package Length

6.73(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-252

Supplier Package

DPAK

Lead Shape

Gull-wing

Package Description

LEAD FREE, PLASTIC, DPAK-3

Package Style

小概要

Moisture Sensitivity Levels

1

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

30

Operating Temperature-Max

175 °C

Rohs Code

有

Manufacturer Part Number

IRLR7821CPBF

Package Shape

RECTANGULAR

Manufacturer

International Rectifier

Number of Elements

1

Part Life Cycle Code

Obsolete

Ihs Manufacturer

INTERNATIONAL RECTIFIER CORP

Risk Rank

5.13

Part Package Code

TO-252AA

Drain Current-Max (ID)

30 A

包装

Tube

JESD-609代码

e3

无铅代码

有

零件状态

Obsolete

ECCN 代码

EAR99

端子表面处理

Matte Tin (Sn) - with Nickel (Ni) barrier

子类别

FET 通用电源

端子位置

SINGLE

终端形式

鸥翼

峰值回流焊温度（摄氏度）

260

Reach合规守则

not_compliant

引脚数量

3

JESD-30代码

R-PSSO-G2

资历状况

不合格

配置

Single

操作模式

增强型MOSFET

箱体转运

DRAIN

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

JEDEC-95代码

TO-252AA

最大漏极电流 (Abs) (ID)

65 A

漏极-源极导通最大电阻

0.01 Ω

脉冲漏极电流-最大值(IDM)

260 A

DS 击穿电压-最小值

30 V

信道型

N

雪崩能量等级（Eas）

230 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

75 W