Infineon IRLR7821CTRPBF

表面安装

YES

EU RoHS

符合免除

ECCN (US)

EAR99

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

65

Maximum Drain Source Resistance (mOhm)

10@10V

Typical Gate Charge @ Vgs (nC)

[email protected]

Typical Input Capacitance @ Vds (pF)

1030@15V

Maximum Power Dissipation (mW)

75000

Typical Fall Time (ns)

3.2

Typical Rise Time (ns)

4.2

Typical Turn-Off Delay Time (ns)

10

Typical Turn-On Delay Time (ns)

11

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

表面贴装

Package Height

2.39(Max)

Package Width

6.22(Max)

Package Length

6.73(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-252

Supplier Package

DPAK

Lead Shape

Gull-wing

Moisture Sensitivity Levels

1

Operating Temperature-Max

175 °C

Rohs Code

有

Manufacturer Part Number

IRLR7821CTRPBF

Manufacturer

International Rectifier

Part Life Cycle Code

Obsolete

Ihs Manufacturer

INTERNATIONAL RECTIFIER CORP

Risk Rank

5.84

包装

卷带

JESD-609代码

e3

无铅代码

有

零件状态

Obsolete

端子表面处理

Matte Tin (Sn) - with Nickel (Ni) barrier

子类别

FET 通用电源

Reach合规守则

not_compliant

引脚数量

3

配置

Single

操作模式

增强型MOSFET

极性/通道类型

N-CHANNEL

最大漏极电流 (Abs) (ID)

65 A

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

75 W