Infineon IRLR7833HR

引脚数

3

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

140

Maximum Drain Source Resistance (MOhm)

4.5@10V

Typical Gate Charge @ Vgs (nC)

[email protected]

Typical Input Capacitance @ Vds (pF)

4010@15V

Maximum Power Dissipation (mW)

140000

Typical Fall Time (ns)

15

Typical Rise Time (ns)

6.9

Typical Turn-Off Delay Time (ns)

23

Typical Turn-On Delay Time (ns)

14

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Schedule B

8541290080

RoHS

Non-Compliant

包装

卷带

零件状态

Obsolete

配置

Single

信道型

N