Infineon IRLU2905HR

引脚数

3

材料

Si

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

55

Maximum Gate Source Voltage (V)

±16

Maximum Continuous Drain Current (A)

42

Maximum Drain Source Resistance (MOhm)

27@10V

Typical Gate Charge @ Vgs (nC)

48(Max)@5V

Typical Input Capacitance @ Vds (pF)

1700@25V

Maximum Power Dissipation (mW)

110000

Typical Fall Time (ns)

15

Typical Rise Time (ns)

84

Typical Turn-Off Delay Time (ns)

26

Typical Turn-On Delay Time (ns)

11

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Schedule B

8541290080

RoHS

Non-Compliant

包装

Tube

零件状态

Obsolete

配置

Single

信道型

N