Infineon JANSF2N7468U2

表面安装

YES

终端数量

3

晶体管元件材料

SILICON

EU RoHS

不合规

ECCN (US)

出口接触方式

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

60

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

75

Maximum Drain Source Resistance (mOhm)

5.6@12V

Typical Gate Charge @ Vgs (nC)

165(Max)@12V

Typical Input Capacitance @ Vds (pF)

6080@25V

Maximum Power Dissipation (mW)

250000

Typical Fall Time (ns)

50(Max)

Typical Rise Time (ns)

125(Max)

Typical Turn-Off Delay Time (ns)

60(Max)

Typical Turn-On Delay Time (ns)

35(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Supplier Temperature Grade

Military

Mounting

表面贴装

Package Height

3.07(Max)

Package Width

17.65(Max)

Package Length

13.46(Max)

PCB changed

3

Standard Package Name

SMD

Supplier Package

SMD-2

Package Description

CHIP CARRIER, R-CBCC-N3

Package Style

CHIP CARRIER

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Reflow Temperature-Max (s)

未说明

Rohs Code

无

Manufacturer Part Number

JANSF2N7468U2

Package Shape

RECTANGULAR

Manufacturer

Infineon Technologies AG

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

5.37

Drain Current-Max (ID)

75 A

JESD-609代码

e0

零件状态

活跃

ECCN 代码

EAR99

端子表面处理

Tin/Lead (Sn/Pb)

端子位置

BOTTOM

终端形式

无铅

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

引脚数量

3

参考标准

MIL-19500/673

JESD-30代码

R-CBCC-N3

资历状况

Qualified

配置

Single

操作模式

增强型MOSFET

箱体转运

DRAIN

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

漏极-源极导通最大电阻

0.0056 Ω

脉冲漏极电流-最大值(IDM)

300 A

DS 击穿电压-最小值

60 V

信道型

N

雪崩能量等级（Eas）

500 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR